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In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier (phi(SB)) capacity of oxide layer (C-INS) and geometrical parameter (nanotube diameter (d(CNT))) on the static performance (I-ON//I-OFF) of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics (I-D = f(V-DS) for different values of VGS, and also the characteristics (I-D = f(V-GS)) for different values of V-DS. All these circuits are studied for a fixed value of phi(SB) = 0.275 eV.

Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters