English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report on design and fabrication of alternately-strained ZnSxSe1-x/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness approximate to 300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above approximate to 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III V and II VI materials.

Structural and Optical Properties of Alternately-Strained ZnSxSe1-x/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV

Structural and Optical Properties of Alternately-Strained ZnS_xSe_1-x/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV