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InN and In-rich InGaN alloys have been attracting attention as important nitride semiconductors which allow to move the spectrum of light emission from the blue-UV region towards the green, red and infrared wavelengths. This possibility is associated with the narrow band gap of InN equal approximately to 0.7 eV. Growing high-quality InGaN layers with high In content on GaN substrates is difficult due to the large lattice mismatch between InN and GaN. To overcome this problem ultra-thin InN/GaN quantum wells (QWs) and superlattices have been investigated [1]. It has been shown theoretically by means of the abinitio calculations that in these structures grown along c crystalline axis, the energy gap at the Γ point of the Brillouin zone changes dramatically with the QW width, from about 2 eV for 1 monolayer (ML) of InN to 0 eV, with inverted the conduction and valence band states, for 3-4 MLs of InN [2]. This effect is associated with the presence of the built-in electric fields originating from the spontaneous and piezoelectric polarizations. The magnitude of the builtin electric field in InN/GaN QWs can reach 12-13 MV/cm which leads to a substantial potential drop over the InN region even for a few MLs thin QWs. The band inversion predicted for InN/GaN QWs with 4MLs of InN was used to suggest the possibility of existence of a topological insulator state in these structures [2]. In this work, we extend the theoretical study of the polarization-induced band inversion phenomenon to c-plane In-rich InGaN/GaN QWs grown on GaN substrates. Our

Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells