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High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductorhave been grown by the low-temperature molecular-beam epitaxy technique. Aneffect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor andthe post-growth annealing treatment of the layers have been investigatedthrough examination of their magnetic and magneto-transport properties.Significant enhancement of the planar Hall effect magnitude upon addition of Biinto the layers is interpreted as a result of increased spin-orbit coupling inthe (Ga,Mn)(Bi,As) layers.

Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers