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This paper describes the influence of phosphorus incorporation into SiO2/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated the diffusion-based process of POCl3 annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at E-V + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.

The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure

The Effect of Phosphorus Incorporation into SiO_{_2}/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure