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The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ = 0.01 Ω cm and ρ = 10 Ω cm, strongly defected by the implantation of Ne ions (D = 1.5 × 10 cm−2, E = 100 keV). On the basis of results obtained for samples annealed at the temperature Ta = 598 K and measured at the testing temperature Tp = 298 K and frequency f = 1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results con rmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant