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In this report we have investigated theoretically the phonon-assisted recombination process of excitons conned in strongly elongated semiconductor nanostructures, called quantum dashes. Interaction with phonon bath leads to the occurrence of phonon-assisted recombination, which in the case of acoustic phonons is manifested in the optical spectra as a deviation of the homogeneously broadened emission line shape from expected Lorentzian pro le via occurrence of the so-called phonon sidebands. Hereby, we have modeled the in uence of the quantum dash geometry on this spectral feature proving pronounced suppression of phonon-induced decoherence for strongly elongated nanostructures. Furthermore, the importance of di erent phonon coupling mechanisms has been evaluated and the spectral di usion e ects, unavoidable in the time-integrated photoluminescence experiments, have been accounted for.

The Phonon-Assisted Radiative Recombination of Excitons Confined in InAs Quantum Dashes