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The thermoelectric properties of a set of single crystalline Si wafers with different oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductor-metal transition pressure at Czochralski grown Si on the concentration c(O) of the interstitial oxygen was found to present a convex curve with the maximum near c(O) approximate to 9 x 10(17) cm(-3). The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers. For Si1-xGex crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I -> Si-II transition. From nanoindentation data the phase transition Si-I -> Si-II, corresponding to semiconductor-metal electronic transformation has been detected at the loading up to approximate to 10 mN. These findings suggest a way for creation of integrated circuits, in which zones with different types of conductivity and hence different p-n, p-n-p etc. structures may be "written" by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.

High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects