English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

GaN/AlGaN single quantum disks on GaN nanorods were grown on Si (001) substrate with native SiO2 layer by a plasma-assisted molecular-beam epitaxy under nitrogen-rich conditions. The transmission electron microscopy observations show single GaN nanorods images with an average thickness of 4 nm for the GaN single quantum disk and nanorod diameter of 15 nm. The observed photoluminescence spectra at 8 K show a peak at 3.475 eV, attributed to an exciton recombination in GaN. A strong peak was observed at 3.542 eV. This peak is attributed to the quantum confinement of excitons in the GaN quantum disks. DOI: 10.12693/APhysPolA.123.473

Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods