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Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 mu m/h, 5 mu m/h and 11 mu m/h at 1540 degrees C on n-doped 8 degrees, 4 degrees and 0 degrees off-cut 4H-SiC (00 . 1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8 degrees and 4 degrees off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0 degrees off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.

acta physica polonica. a

Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates