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The effect of annealing at room temperature on the excess conductivity of oxygen deficient HoBa2Cu3O7-delta single crystal is studied. It is shown that there is substantial extension of the interval of linear dependence rho(ab)(T) and narrowing of the temperature area of the pseudo-gap regime as a result of annealing. The excess conductivity satisfies the exponential temperature dependence in a wide temperature interval. The temperature dependence of the pseudogap is satisfactorily described by the BCS-BEC theoretical model.

Effect of Oxygen Redistribution on Temperature Dependence of Pseudo-Gap in Underdoped HoBa2Cu3O7-δSingle Crystals

Effect of Oxygen Redistribution on Temperature Dependence of Pseudo-Gap in Underdoped HoBa₂Cu₃O_7-δSingle Crystals