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We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized In As nanocrystals. (100) Si wafers were implanted at 25 and 500 degrees C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 degrees C. A part of the samples implanted at 25 degrees C was additionally exposed to H-2(+) ions (100 keV, 1.2 x 10(16) cm(-2) in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form In As nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.

Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals