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Recently gallium nitride appeared to be promising material for application in optoelectronics and electronics. Because of the lack of GaN native crystals alternative substrates are commonly applied. All of them exhibit thermal and lattice mismatch compared to GaN which causes defects generation and strain in deposited layers. Various buffer layers can be applied to minimize the stress which is especially undesirable in optoelectronic devices because it modulates the properties of active layer. The paper presents results of investigation of aluminium buffer layers temperature of deposition influence on the strain in subsequent high temperature GaN layer. Hydride vapor phase epitaxy (HVPE) was applied because it offers the unique possibility to obtain high growth rates and thus, thick layers, which are candidates for free-standing substrates after further delamination.

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers