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The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon{electron type for determining both the efiective carrier lifetime ? in∞uenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters ? and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the ofiered method, are presented.

Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method