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Semimetallic off-stoichiometric CeNi1−δSn1+δ−xSbx system with δ ≈ 0.06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f -electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott–Hubbard insulators is stressed.

Stabilization of Kondo Semiconductor State by Sb Doping of CeNi1-δSn1+δand the General Criterion of Its Appearance

Stabilization of Kondo Semiconductor State by Sb Doping of CeNi_1-δSn_1+δand the General Criterion of Its Appearance