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The low temperature non-exponential transients of photoconductivity build-up in gallium doped Cd0.99Mn0.01Te and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of Cd0.99Mn0.01Te:Ga the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.

Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd0.99Mn0.01Te

Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd_0.99Mn_0.01Te