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A study of the defect structure of heteroepitaxially grown Hg1−xCdxTe (MCT) films was performed with the use of ion milling. Undoped and in situ As(acceptor) or In(donor) doped films with x = 0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ 10 cm−3, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 10 cm−3, which is typical of high-quality MCT.

Study of the Defect Structure of Hg1-xCdxTe Films by Ion Milling

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling