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Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by do magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at lambda = 390 nm and the time constant of photoresponse about 10 mu s for Al/ZnO:N/Al structures with 4 mu m interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio approximate to 10(2) at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures