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We report the fabrication and investigation of p-n diode structures based on thin hole-doped La2/3Ca1/3MnO3 films grown on n-type silicon substrates. La2/3Ca1/3MnO3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La2/3Ca1/3MnO3 thin films on Si substrates. The surface roughness of La2/3Ca1/3MnO3 films investigated by atomic force microscopy was found to be in the range of 25 divided by 30 nm. Studies of electrical properties showed that La2/3Ca1/3MnO3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.

Growth and Investigation of p-La2/3Ca1/3MnO3/n-Si Heterostructures

Growth and Investigation of p-La_2/3Ca_1/3MnO₃/n-Si Heterostructures