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The plasma instabilities (PI) are promising mechanisms for high frequency microwave generation in semiconductor nnn structures. The two types of PI at near collisionless (NCL) and optical phonon emission dominated (OPED) electron transport conditions in the nnn structures are considered by Ryzhij et al. [1]. They found that both types of PI’s can lead to current self-oscillations up to the plasma frequency, which depends on the carrier concentration in the n-region of the nnn structure (see Ref. [1] and references therein). The regularity of selfoscillations is sensitive to the spatial resonance conditions for space charge waves periodically growing and decaying due to the PI, i.e. there exists the optimum length of n-region at the given doping of this region. In real nnn structures the OPED and especially NCL plasma instabilities are suppressed by the lattice (mainly due to accoustic phonons) and impurity scatterings. However, the progress in manufacturing structures with remote doped conducting channels recently gave the second breath to PI investigations. Also the recent achievements in THz frequency noise measurements have opened new directions in PI investigation. It is well known that the noise spectrum contains integrated information about physical processes such as carrier scattering, various instabilities, including PI, etc. Therefore, the identification of noise spectrum pecularities such as the peaks in the noise spectra related to the certain process is important.

Plasma Instability Noise in InP n+nn+Structures: Monte Carlo Simulation

Plasma Instability Noise in InP n⁺nn⁺Structures: Monte Carlo Simulation