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The two-dimensional gas in AIGaN/AIN/GaN heterostucture with a very thin (0.6 nm) AIN spacer was investigated by conductivity relaxation measurements in 86-300 K temperature range. The results show the presence of two exponential relaxation processes characterized by different characteristic time constants. Parameters of the fast and slow components of the processes differently depend on the electric field and temperature. The fast process is attributed to influence of the electric field on the barrier formed by the spacer, while the slow process is attributed to the hot-electron capture out of the channel followed by electron thermal release.

The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN