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Photoluminescence measurements were carried out on Be δ-doped GaAs/Al0.33Ga0.67As heterostructure at 1.6 K in magnetic fields (B) up to 4 T. Luminescence originating from recombination of a two-dimensional electron gas and photoexcited holes localized on Be acceptors was analyzed. The degree of circular polarization (γC) of the luminescence from fully occupied Landau levels was determined as a function of B and the two-dimensional electron gas concentration, ns. At B constant, γC decreased with the increase in ns. The intensity of the optical transition considered was calculated with taking into account sand d-like parts of the acceptor envelope function. It is shown that the presence of the d-like part explains the observed γC(ns) dependence quantitatively. This shows that polarization spectroscopy on acceptor δ-doped heterostructures enables one to test experimentally the contribution of the L > 0 component of the envelope in a shallow acceptor description.

Spectroscopy of Be Acceptor Ground State in GaAs/AlGaAs Heterostructure