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We apply the density-functional technique to determine the lattice constantof GaAs supercells containing Mn_Ga, Mn_int, and As_Ga impurities, and use alinear interpolation to describe the dependence of the lattice constant a ofGa_{1-x}Mn_xAs on the concentrations of these impurities. The results of thesupercell calculations confirm that Mn_Ga does not contribute to the latticeexpansion. The increase of a is due to both Mn_int and As_Ga, that are bothcreated in the as-grown (Ga,Mn)As in proportion to x, and that are mostprobably present in a remarkable amount also in the best annealed materials.

Lattice Expansion of (Ga,Mn)As: The Role of Substitutional Mn and of the Compensating Defects