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We present an experimental study of a 2.5 GHz electron pump based on thequantized acoustoelectric current driven by surface acoustic waves (SAWs)through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At lowtemperatures and with an additional counter-propagating SAW beam, up to n = 20current plateaus at I=nef could be resolved, where n is an integer, e theelectron charge, and f the SAW frequency. In the best case the accuracy of thefirst plateau at 0.40 nA was estimated to be dI/I = +/- 25 ppm over 0.25 mV ingate voltage, which is better than previous results.

An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves