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Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples.

international journal of physics

Annealing Effect on (SnO&lt;SUB&gt;2&lt;/SUB&gt;)&lt;SUB&gt;0.3&lt;/SUB&gt;:(In&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt;)&lt;SUB&gt;0.7&lt;/SUB&gt;&lt;SUB&gt; &lt;/SUB&gt;Solar Cell Prepared by PLD Technique