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The next generation of DRAM memories demands the miniaturization of the storage capacitor . The road to smaller capacitors still able to maintain a sufficient amount of charge in terms of an error free logic state recognition leads to high-k materials . (Ba,Sr)Ti03 is the most promising of these new materials, since it offers a high relative permittivity combined with low leakage . Deposition of BST via MOCVD is considered to be the method of choice for thin films in view of DRAM application, in order to achieve homogenous growth and sufficient step coverage in high aspect ratio trenches . This thesis is concemed with the MOCVD growth of BST thin films using a prototype tool for oxide deposition and the systematical understanding of the film properties as a function of their composition and of the growth parameters . The scope of this thesis is twofold . From the engineering point of view an existing MOCVD tool, the AIXTRON Planetary Reactor® 2600G3 that has been developed for the growth of 111-V semiconductors, is optimized for the deposition of ceramic oxides . Both reactor and deposition processes are modified to achieve an optimal temperature and process homogeneity . Many changes an the vital components of the system like the liquid delivery system (LDS-300B) from ATMI, the precursor and the gas transfer lines are performed . Design of experiment methods (DOE) are applied early in many cases to narrow the process window and reduce the multidimensional parameter space to a manageable minimum and allow precise statements about the behavior of the reactor . The scientific part of this thesis considers the systematic investigation of the properties of the (Ba,Sr)Ti03 material system in form of thin films ranging from few nm up to 120nm . Many of the structural and especially the electrical properties interesting for application are focused and a variety of analyzing techniques are applied . Within the scope of this work, an advanced XRF analytic procedure is developed, in order to achieve a precision <_1% in thickness and stoichiometry measurements . The investigations cover all important material aspects of BST and especially its integration in the existing CMOS process . Finally, a central point in the discussion is the interrelation between the microstructure of the films and the obtained electrical properties.

MOCVD of high-K ceramic thin films for the Gbit DRAM technology