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Isomorphous layered A(2)MBr(4) perovskite (A = C6H5C2-H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5-2.9 eV were prepared. Though the as-grown A(2)MBr(4) perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore, we demonstrated that hole doping is effective in wide-ranging A(2)MX(4) materials that have sizable valence and conduction bands with tunable band gaps, showing potential as soluble semiconductors

Hole Doping of Tin Bromide and Lead Bromide Organic–Inorganic Hybrid Semiconductors