Open AccessThe Influence on Electrical Performance of Double-Polysilicon Bipolar Transistors by Forming Gas Annealing
Author(s) -
M. Sand n,
Tord Karlin,
Pengfei Ma,
Jan Grahn,
ShiLi Zhang,
M. stling
Publication year - 1999
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1238/physica.topical.079a00243
Subject(s) - materials science , annealing (glass) , bipolar junction transistor , optoelectronics , polysilicon depletion effect , transistor , forming gas , engineering physics , voltage , composite material , electrical engineering , physics , engineering , gate oxide
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom