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Nonlinear electron transport in normally pinched-off quantum wires wasstudied. The wires were fabricated from AlGaAs/GaAs heterostructures withhigh-mobility two-dimensional electron gas by electron beam lithography andfollowing wet etching. At certain critical source-drain voltage the samplesexhibited a step rise of the conductance. The differential conductance of theopen wires was noticeably lower than e^2/h as far as only part of thesource-drain voltage dropped between source contact and saddle-point of thepotential relief along the wire. The latter limited the electron flow injectedto the wire. At high enough source-drain voltages the decrease of thedifferential conductance due to the real space transfer of electrons from thewire in GaAs to the doped AlGaAs layer was found. In this regime the sign ofdifferential magnetoconductance was changed with reversing the direction of thecurrent in the wire or the magnetic field, whet the magnetic field lies in theheterostructure plane and is directed perpendicular to the current. Thedependence of the differential conductance on the magnetic field and itsdirection indicated that the real space transfer events were mainly mediated bythe interface scattering.