English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A novel type of shallow interface state in junctions of two semiconductorswithout band inversion is identified within the envelope functionapproximation, using the two-band model. It occurs in abrupt junctions when theinterband velocity matrix elements of the two semiconductors differ and thebulk dispersion curves intersect. The in-plane dispersion of the interfacestate is found to be confined to a finite range of momenta centered around thepoint of intersection. These states turn out to exist also in graded junctions,with essentially the same properties as in the abrupt case.Comment: 1 figur

Interface states in junctions of two semiconductors with intersecting dispersion curves