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We show within a local self-consistent mean-field treatment that a randomdistribution of magnetic adatoms can open a robust gap in the electronicspectrum of graphene. The electronic gap results from the interplay between thenature of the graphene sublattice structure and the exchange interactionbetween adatoms.The size of the gap depends on the strength of the exchangeinteraction between carriers and localized spins and can be controlled by bothtemperature and external magnetic field. Furthermore, we show that an externalmagnetic field creates an imbalance of spin-up and spin-down carriers at theFermi level, making doped graphene suitable for spin injection and otherspintronic applications.

Magnetic exchange mechanism for electronic gap opening in graphene