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Preparing graphene and its derivatives on functional substrates may openenormous opportunities for exploring the intrinsic electronic properties andnew functionalities of graphene. However, efforts in replacing SiO$_{2}$ havebeen greatly hampered by a very low sample yield of the exfoliation and relatedtransferring methods. Here, we report a new route in exploring new graphenephysics and functionalities by transferring large-scale chemical vapordeposition single-layer and bilayer graphene to functional substrates. Usingferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-lowvoltage operation of graphene field effect transistors within $\pm1$ V withmaximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios largerthan 10 times. After polarizing PZT, switching of graphene field effecttransistors are characterized by pronounced resistance hysteresis, suitable forultra-fast non-volatile electronics.

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics