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Artificial confinement of electrons by tailoring the layer thickness hasturned out to be a powerful tool to harness control over competing phases innano-layers of complex oxides. We investigate the effect of dimensionality ontransport properties of $d$-electron based heavy-fermion metalCaCu$_{3}$Ru$_{4}$O$_{12}$. Transport behavior evolves from metallic tolocalized regime upon reducing thickness and a metal insulator transition isobserved below 3 nm film thickness for which sheet resistance crosses $h/e^{2}\sim 25~$k$\Omega$, the quantum resistance in 2D. Magnetotransport studyreveals a strong interplay between inelastic and spin-orbit scattering lengthsupon reducing thickness, which results in weak antilocalization (WAL) to weaklocalization (WL) crossover in magnetoconductance.

Evidence for weak antilocalization-weak localization crossover and metal-insulator transition in CaCu$_{3}$Ru$_{4}$O$_{12}$ thin films