English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$(\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsicpiezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)are studied by density functional theory (DFT). Among the six monolayers, the$\mathrm{CrSi_2N_4}$ has the best piezoelectric strain coefficient $d_{11}$ of1.24 pm/V, and the second is 1.15 pm/V for $\mathrm{MoSi_2N_4}$. Taking$\mathrm{MoSi_2N_4}$ as a example, strain engineering is applied to improve$d_{11}$. It is found that tensile biaxial strain can enhance $d_{11}$ of$\mathrm{MoSi_2N_4}$, and the $d_{11}$ at 4\% can improve by 107\% with respectto unstrained one. By replacing the N by P or As in $\mathrm{MoSi_2N_4}$, the$d_{11}$ can be raise substantially. For $\mathrm{MoSi_2P_4}$ and$\mathrm{MoSi_2As_4}$, the $d_{11}$ is as high as 4.93 pm/V and 6.23 pm/V,which is mainly due to smaller $C_{11}-C_{12}$ and very small minus or positiveionic contribution to piezoelectric stress coefficient $e_{11}$ with respect to$\mathrm{MoSi_2N_4}$. The discovery of this piezoelectricity in monolayer$\mathrm{XSi_2N_4}$ enables active sensing, actuating and new electroniccomponents for nanoscale devices, and is recommended for experimentalexploration.

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)