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Charge transport in amorphous oxide semiconductors is often described as theband transport affected by disorder in the form of random potential barriers(RB). Theoretical studies in the framework of this approach neglected so farthe percolation nature of the phenomenon. In this article, a recipe fortheoretical description of charge transport in the RB model is formulated usingpercolation arguments. Comparison with the results published so far evidencesthe superiority of the percolation approach.

Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors