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We report the effects of Ce substitution on structural, electronic, andmagnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9),which are newly obtained in this study. Metallic conductivity was observed forx > 0.1 because of electron carriers induced by mixed valence of Ce ions, asrevealed by bond valence sum calculation and magnetization measurements. Zeroresistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6,indicating the emergence of bulk superconductivity in these compounds.Dome-shaped superconductivity phase diagram with the highest transitiontemperature (Tc) of 3.1 K, which is slightly lower than that of F-dopedLaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows thatthe mixed valence of Ce ions can be utilized as an alternative approach forelectron-doping in layered bismuth-chalcogenides to induce superconductivity.

Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions