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We report high pressure studies of the structural stability of Ru2Sn3, a newtype of three dimensional topological insulator (3D-TI) with unique quasi-onedimensional Dirac electron states throughout the surface Brillouin zone of itsone-atmosphere low temperature orthorhombic form. Our in-situ high-pressuresynchrotron x-ray diffraction and electrical resistance measurements revealthat upon increasing pressure the tetragonal to orthorhombic shifts to highertemperature. We find that the stability of the orthorhombic phase that hoststhe non-trivial topological ground state can be pushed up to room temperatureby an applied pressure of ~ 20 GPa. This is in contrast to the commonly known3D-TIs whose ground state is usually destroyed under pressure. Our resultsindicate that pressure provides a possible pathway for realizing aroom-temperature topological insulating state in Ru2Sn3.

Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature