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Theoretically, various physical properties of AV$_{2}$O$_{4}$ (A=Zn, Cd andMg) spinels have been extensively studied for last 15 years. Besides of this,no systematic comparative study has been done for these compounds, where thematerial specific parameters are used. Here, we report the comparativeelectronic behaviour of these spinels by using a combination of densityfunctional theory and dynamical mean-field theory, where the self-consistentcalculated Coulomb interaction $U$ and Hund's coupling $J$ (determined byYukawa screening $\lambda$) are used. The main features, such as insulatingband gaps ($E_{g}$), degree of itinerancy of V 3$d$ electrons and position oflower Hubbard band are observed for these parameters in these spinels. Thecalculated values of $E_{g}$ for ZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ andMgV$_{2}$O$_{4}$ are found to be $\sim$0.9 eV, $\sim$0.95 eV and $\sim$1.15 eV,respectively, where the values of $E_{g}$ are close to experiment forZnV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$. The position of lower Hubbard band areobserved around $\sim$-1.05 eV, $\sim$-1.25 eV and $\sim$-1.15 eV forZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$, respectively, whichare also in good agreement with the experimental data for ZnV$_{2}$O$_{4}$. Theorder of average impurity hybridization function of V site are found to beZnV$_{2}$O$_{4}$$>$MgV$_{2}$O$_{4}$$>$CdV$_{2}$O$_{4}$. Hence, the degree oflocalization of V 3$d$ electrons is largest for CdV$_{2}$O$_{4}$ and smallestfor ZnV$_{2}$O$_{4}$, which is in accordance with our earlier results. Hence,present work shows the importance of material specific parameters to understandthe comparative electronic behaviour of these compounds.

Electronic structure study of vanadium spinels by using density functional theory and dynamical mean field theory