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We study the detailed temperature and composition dependence of theresistivity, $\rho(T)$, and thermopower, $S(T)$, for a series of layeredbismuth chalcogenides Bi$_2$Te$_{3-x}$Se$_x$, and report the stoichiometrydependence of the optical band gap. In the resistivity of the most compensatedmember, Bi$_2$Te$_{2.1}$Se$_{0.9}$, we find a low-temperature plateau whoseonset temperature correlates with the high-temperature activation energy. Forthe whole series $S(T)$ can be described by a simple model for an extrinsicsemiconductor. By substituting Se for Te, the Fermi level is tuned from thevalence band into the conduction band. The maximum values of $S(T)$, bulk bandgap as well the activation energy in the resistivity are found for $x \approx0.9$.

Bi2Te_xSe_y series studied by resistivity and thermopower