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We have measured the electrical properties of a V2O3 thin film micro bridgeat the insulator metal transition (IMT). Discontinuous jumps to lower voltagesin the current voltage characteristic (IV) followed by an approximatelyconstant voltage progression for high currents indicate an electrical breakdownof the device. In addition, the IV curve shows hysteresis and a trainingeffect, i.e. the subsequent IV loops are different from the first IV loop afterthermal cycling. Low temperature scanning electron microscopy (LTSEM) revealsthat the electrical breakdown over the whole device is caused by the formationof electro-thermal domains (ETDs), i.e. the current and temperatureredistribution in the device. On the contrary, at the nanoscale, the electricalbreakdown causes the IMT of individual domains. In a numerical model weconsidered these domains as a network of resistors and we were able toreproduce the electro-thermal breakdown as well as the hysteresis and thetraining effect in the IVs.

Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition