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Recent advances in fabrication have enabled radial-junction architectures forcost-effective and high-performance optoelectronic devices. Unlike a planar PNjunction, a radial-junction geometry maximizes the optical interaction in thethree-dimensional (3D) structures, while effectively extracting the generatedcarriers via the conformal PN junction. In this paper, we reportcharacterizations of radial PN junctions that consist of p-type Si micropillarscreated by deep reactive-ion etching (DRIE) and an n-type layer formed byphosphorus gas diffusion. We use electron-beam induced current (EBIC)microscopy to access the 3D junction profile from the sidewall of the pillars.Our EBIC images reveal uniform PN junctions conformally constructed on the 3Dpillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimatelocal carrier separation/collection efficiency that reflects the quality of thePN junction. We find the EBIC efficiency of the pillar array increases with theincident electron beam energy, consistent with the EBIC behaviors observed in ahigh-quality planar PN junction. The magnitude of the EBIC efficiency of ourpillar array is about 70 % at 10 kV, slightly lower than that of the planardevice (about 81 %). We suggest that this reduction could be attributed to theunpassivated pillar surface and the unintended recombination centers in thepillar cores introduced during the DRIE processes. Our results support that thedepth-dependent EBIC approach is ideally suitable for evaluating PN junctionsformed on micro/nanostructured semiconductors with various geometry.

Depth-Dependent EBIC Microscopy of Radial-Junction Si Micropillar Arrays