English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

While low-dimensional organometal halide perovskites are expected to open upnew opportunities for a diverse range of device applications, like in theirbulk counterparts, the toxicity of Pb-based halide perovskite materials is asignificant concern that hinders their practical use. We recently predictedthat lead triiodide (PbI$_3$) columns de-rived from trimethylsulfonium (TMS)lead triiodide (CH$_3$)$_3$SPbI$_3$ (TMSPbI$_3$) by stripping off TMS ligandsshould be semimetallic, and additionally ultrahigh negative differentialresistance (NDR) can arise from the heterojunction composed of a TMSPbI$_3$channel sandwiched by PbI$_3$ electrodes. Herein, we computationally explorewhether similar material and device characteristics can be obtained from otherone-dimensional halide perovskites based on non-Pb metal elements, and in doingso deepen the understanding of their mechanistic origins. First, scanningthrough several candidate metal halide inorganic frameworks as well as theirparental form halide perovskites, we find that the germanium triiodide(GeI$_3$) column also assumes a semimetallic character by avoiding the Peierlsdistortion. Next, adopting the bundled nanowire GeI$_3$-TMSGeI$_3$-GeI$_3$junction configuration, we obtain a drastically high peak current density andultrahigh NDR at room temperature. Furthermore, the robustness andcontrollability of NDR signals under strain are revealed, establishing itspotential for flexible electronics applications. It will be emphasized that,despite the performance metrics notably enhanced over those from thePbI$_3$-TMSPbI$_3$-PbI$_3$ case, these device characteristics still arise fromthe identical quantum hybridization NDR mechanism.

Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control