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In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H 2 /NH 3  gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H 2 /NH 3  mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties