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Nowadays, it is still technologically challenging to prepare highly sensitive sensing films using microelectrical mechanical system (MEMS) compatible methods for miniaturized sensors with low power consumption and high yield. Here, sensitive cross-linked SnO 2 :NiO networks were successfully fabricated by sputtering SnO 2 :NiO target onto the etched self-assembled triangle polystyrene (PS) microsphere arrays and then ultrasonically removing the PS microsphere templates in acetone. The optimum line width (~ 600 nm) and film thickness (~ 50 nm) of SnO 2 :NiO networks were obtained by varying the plasma etching time and the sputtering time. Then, thermal annealing at 500 °C in H 2  was implemented to activate and reorganize the as-deposited amorphous SnO 2 :NiO thin films. Compared with continuous SnO 2 :NiO thin film counterparts, these cross-linked films show the highest response of ~ 9 to 50 ppm ethanol, low detection limits (< 5 ppm) at 300 °C, and also high selectivity against NO 2 , SO 2 , NH 3 , C 7 H 8 , and acetone. The gas-sensing enhancement could be mainly attributed to the creating of more active adsorption sites by increased stepped surface in cross-linked SnO 2 :NiO network. Furthermore, this method is MEMS compatible and of generality to effectively fabricate other cross-linked sensing films, showing the promising potency in the production of low energy consumption and wafer-scale MEMS gas sensors.

Sensitive Cross-Linked SnO2:NiO Networks for MEMS Compatible Ethanol Gas Sensors