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In this paper, the hybrid β-Ga 2 O 3  Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height  ϕ   b   increases, and the ideality factor  n  decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga 2 O 3  interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of  R  254 nm / R  400 nm  up to 1.26 × 10 3  are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga 2 O 3  Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors