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The chemical, physical, and electrical properties of the atomic layer deposited Hf 0.5 Zr 0.5 O 2  thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf 0.5 Zr 0.5 O 2  films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf 0.5 Zr 0.5 O 2  film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10 5  cycles, with a reasonably high double remanent polarization value of ~40 μC/cm 2 . The film also showed reliable switching up to 10 9  cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.

nanoscale research letters

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors