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In this study, aluminum oxide (Al 2 O 3 ) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O 2 ), forming gas (FG), or two-step annealing. Minority carrier lifetime of the samples was measured by Sinton WCT-120. Field-effect passivation and chemical passivation were evaluated by fixed oxide charge ( Q  f ) and interface defect density ( D  it ), respectively, using capacitance-voltage measurement. The results show that O 2  annealing gives a high  Q  f  of − 3.9 × 10 12  cm −2 , whereas FG annealing leads to excellent Si interface hydrogenation with a low  D  it  of 3.7 × 10 11  eV −1  cm −2 . Based on the consideration of the best field-effect passivation brought by oxygen annealing and the best chemical passivation brought by forming gas, the two-step annealing process was optimized. It is verified that the Al 2 O 3  film annealed sequentially in oxygen and then in forming gas exhibits a high  Q  f  (2.4 × 10 12  cm −2 ) and a low  D  it  (3.1 × 10 11  eV −1  cm −2 ), yielding the best minority carrier lifetime of 1097 μs. The SiN x /Al 2 O 3  passivation stack with two-step annealing has a lifetime of 2072 μs, close to the intrinsic lifetime limit. Finally, the passivated emitter and rear cell conversion efficiency was improved from 21.61% by using an industry annealing process to 21.97% by using the two-step annealing process.

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing