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An ultra-low specific on-resistance ( R  on,sp ) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper. On-resistance analytical model for the proposed LDMOS is built to provide an in-depth insight into the relationship between the drift region resistance and the channel region resistance. N-buried layer is introduced under P-well to provide a low-resistance conduction path and reduce the resistance of the channel region significantly. Enhanced dual-gate structure is formed by N-buried layer while avoiding the vertical punch-through breakdown in off-state. Partial P-buried layer with optimized length is adopted under the N-drift region to extend vertical depletion region and relax the electric field peak in off-state, which enhances breakdown voltage (BV) with low drift region resistance. For the LDMOS with enhanced dual-gate and partial P-buried layer, the result shows that  R  on,sp  is 8.5 mΩ·mm 2  while BV is 43 V.

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer