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SnSe 2  field-effect transistor was fabricated based on exfoliated few-layered SnSe 2  flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2  FET can achieve an on/off ratio as high as ~ 10 4  within 1 V bias, which is ever extremely difficult for SnSe 2  due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2  V −1  s −1  at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2  FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.   Electronic supplementary material  The online version of this article (10.1186/s11671-019-2850-0) contains supplementary material, which is available to authorized users.

SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity