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We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si  t  Si , (001)-oriented Ge pMOSFETs achieve the higher on-state current  I  ON  and effective hole mobility  μ  eff  compared to the devices on other orientations. At an inversion charge density  Q  inv  of 3.5 × 10 12  cm −2 , Ge(001) transistors with 0.9 nm  t  Si  demonstrate a peak  μ  eff  of 278 cm 2 /V × s, which is 2.97 times higher than the Si universal mobility. With the decreasing of  t  Si ,  I  ON  of Ge transistors increases due to the reduction of capacitive effective thickness, but subthreshold swing and leakage floor characteristics are degraded attributed to the increasing of midgap  D  it .

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation